TPS27082L Datasheet by Texas Instruments

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TPS27082L
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
TPS27082L 1.2-V to 8-V, 3-A PFET Load Switch With Configurable Slew Rate, Fast
Transient Isolation and Hysteretic Control
1 Features 2 Applications
1 Low ON-Resistance, High Current PFET High-Side Load Switches
Inrush-current Controls
– RON = 32 m(Typical) at VGS = –4.5 V
Power Sequencing and Controls
– RON = 44 m(Typical) at VGS = –3.0 V
Stand-by Power Isolation
– RON = 85 m(Typical) at VGS = –1.8 V Portable Power Switches
– RON = 97 m(Typical) at VGS = –1.5 V
– RON = 155 m(Typical) at VGS = –1.2 V 3 Description
Configurable Turn-ON and Turn-OFF Slew Rate The TPS27082L IC is a high-side load switch that
10-µs Default Minimum Output Rise Time at integrates a Power PFET and a control circuit in a
VIN=5 V tiny TSOT-23 package. TPS27082L requires very low
Configurable Turnon and Turnoff Slew Rate ON-state quiescent current and offers very low OFF-
state leakage thus optimizing system power
Supports a Wide Range of VIN 1.2 V Up to 8 V efficiency.
Excellent OFF Isolation Even Under Fast Input TPS27082L ON/OFF logic interface features
Transients hysteresis, thus providing a robust logic interface
1.0V up to 8V NMOS Control Logic Interface With even under very noisy operating conditions.
Configurable Hystersis TPS27082L ON/OFF interface supports direct
Fully Protected Against ESD (All Pins) interfacing to low voltage GPIOs down to 1 V. The
TPS27082L level shifts ON/OFF logic signal to VIN
HBM 2000 V, CDM 500 V levels without requiring an external level shifter.
Very Low ON-state Quiescent Current (Down to
1.2 µA) TPS27082L features a novel OFF isolation circuit that
prevents PMOS from turning ON in applications that
Very Low OFF-state Leakage Current (Typical may have fast transients, at the VIN pin when the
100 nA) load switch is in the OFF-state.
Available in 2.9 mm × 1.6 mm x 0.75mm SOT-23
(DDC) Package Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
TPS27082DDC SOT (6) 2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
l TEXAS INSTRUMENTS
TPS27082L
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
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Table of Contents
7.4 Device Functional Modes.......................................... 9
1 Features.................................................................. 18 Application and Implementation ........................ 10
2 Applications ........................................................... 18.1 Application Information............................................ 10
3 Description ............................................................. 18.2 Typical Application ................................................. 10
4 Revision History..................................................... 28.3 System Examples ................................................... 13
5 Pin Configuration and Functions......................... 39 Power Supply Recommendations...................... 16
6 Specifications......................................................... 410 Layout................................................................... 16
6.1 Absolute Maximum Ratings ...................................... 410.1 Layout Guidelines ................................................. 16
6.2 ESD Ratings.............................................................. 410.2 Layout Example .................................................... 16
6.3 Recommended Operating Conditions....................... 410.3 Thermal Considerations........................................ 17
6.4 Thermal Information.................................................. 411 Device and Documentation Support ................. 18
6.5 Electrical Characteristics........................................... 511.1 Community Resources.......................................... 18
6.6 Dissipation Ratings ................................................... 511.2 Trademarks........................................................... 18
6.7 Typical Characteristics.............................................. 611.3 Electrostatic Discharge Caution............................ 18
7 Detailed Description.............................................. 911.4 Glossary................................................................ 18
7.1 Overview ................................................................... 912 Mechanical, Packaging, and Orderable
7.2 Functional Block Diagram......................................... 9Information ........................................................... 18
7.3 Feature Description................................................... 9
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (September 2013) to Revision C Page
Added Pin Configuration and Functions section, Storage Conditions table, ESD Ratings table, Feature Description
section, Device Functional Modes,Application and Implementation section, Power Supply Recommendations
section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable
Information section ................................................................................................................................................................ 1
Changes from Revision A (April 2013) to Revision B Page
Removed Ordering Information table. .................................................................................................................................... 1
Fixed UNIT typo for ON/OFF input logic hysteresis PARAMETER........................................................................................ 5
Changes from Original (December 2012) to Revision A Page
Updated wording in the document.......................................................................................................................................... 1
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VOUT
1
2
3
GND
VOUT
VIN
6
5
4
R1/C1
ON/OFF
TPS27082L
www.ti.com
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
5 Pin Configuration and Functions
DDC Package
6-Pin SOT
Top View
Pin Functions
PIN I/O DESCRIPTION
NAME NO.
GND 1 I Connect to the system GND
2Drain Terminal of Power PFET (Q1) – If required, connect a slew control capacitor between pins VOUT
VOUT O and R1/C
3
VIN 4 I Source Terminal of Power PFET (Q1) – connect a pull-up resistor between the pins VIN and R1/C1
Active high enable – when driven with a high impedance driver, connect an external pull down resistor to
ON/OFF 5 I GND
R1/C1 6 I Gate Terminal of Power PFET (Q1)
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6 Specifications
6.1 Absolute Maximum Ratings
Specified at TJ= –40°C to 125°C (unless otherwise noted)(1)(2)(3)
MIN MAX UNIT
VINmax,VIN, VOUT pin maximum voltage with respect to GND pin –0.1 8 V
VOUTmax
VON/OFF ON/OFF control voltage –0.3 8 V
Max continuous drain current of Q1 3
IQ1-ON A
Max pulsed drain current of Q1(4) 9.5
PDMax power dissipation at TA= 25°C, TJ= 150°C(4) 6 Pin-TSOT, RθJA =105°C/W 1190 mW
TAOperating free-air ambient temperature -40 125(5) °C
TJ-max Operating virtual junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Operating at the absolute TJ-max of 150°C can affect reliability – for higher reliability it is recommended to ensure TJ< 125°C
(3) Refer to TI’s design support web page at www.ti.com/thermal for improving device thermal performance.
(4) Pulse Width < 300µs, Duty Cycle < 2%
(5) TJ-max limits and other related conditions apply. Refer to SOA charts, Figure 8 through Figure 13
6.2 ESD Ratings
VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000
V(ESD) Electrostatic discharge V
Charged device model (CDM), per JEDEC specification JESD22-C101, ±500
all pins(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input Voltage Range 1 8 V
TAOperating free-air ambient temperature range -40 85 °C
TJJunction Temperature -40 105 °C
6.4 Thermal Information
TPS27082L
THERMAL METRIC(1) DDC (SOT) UNIT
6 PINS
RθJA Junction-to-ambient thermal resistance 105 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 43 °C/W
RθJB Junction-to-board thermal resistance 17.8 °C/W
ψJT Junction-to-top characterization parameter 6.5 °C/W
ψJB Junction-to-board characterization parameter 16.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
Full temperature range spans TJ= –40°C to 125°C (unless otherwise noted)
FULL TEMP
TA=TJ= 25°C RANGE(1)
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN MAX
OFF CHARACTERISTICS
VON/OFF = 0 V, VGS(Q1) = 0 V,
BVIN VIN breakdown voltage –8 –8 V
ID(Q1) = 250 µA
VIN = 8 V, ON/OFF = 0 V, 0.15 30
RL = 2.5
IFIN VIN pin total forward leakage current(2) µA
VIN = 5 V, ON/OFF = 0 V, 0.04 12
RL = 2.5
ON CHARACTERISTICS(3)
VIN = 5.0 V, R1 = 125 k(1),1.0
RL = 2.5
VT+ Positive going ON/OFF threshold V
voltage(4)
(VIH) VIN = 5.0 V, R1 = 1 M,1.0
RL = 2.5
VIN = 5.0 V, ID(Q1) < 175 µA, 400
R1 =125 k(1)
VT– Negative going ON/OFF threshold mV
voltage(4)
(VIL) VIN = 5.0 V, ID(Q1) < 175 µA, 270
R1 = 1 M
VIN = 5.0 V, R1 = 125 k(1) 600
VTON/OFF input logic hysteresis(4) mV
(VT+–VT–)VIN = 5.0 V, R1 = 1 M730
VGSQ1 = –4.5V, ID = 3.0 A 32 52 64
VGS1Q1 = -3.0V, ID =2 .5 A 44 66 84
VGS1Q1 = -2.5V, ID = 2.5 A 50 76 92
RQ1(ON) Q1 Channel ON resistance(5) m
VGSQ1 = -1.8V, ID = 2.0 A 82 113 147
VGSQ1 = -1.5V, ID = 1.0 A 97 150 173
VGSQ1 = -1.2V, ID = 0.50 A 155 250 260
R1/C1 pin to GND pin resistance when
RGNDON VON/OFF = 1.8 V 12.5 14.2 14.5 k
Q2 is ON
Q1 DRAIN-SOURCE DIODE PARAMETERS(1)(3)(6)
IFSD Source-drain diode peak forward current VFSD(Q1) = 0.8V, VON/OFF = 0 V 1 A
VFSD Source-drain diode forward voltage IFSD(Q1) = -0.6A, VON/OFF = 0 V 1.0 V
(1) Specified by design only
(2) Refer to IFVIN plots for more information
(3) Pulse width < 300µs, Duty cycle < 2%
(4) Refer to charts for more information on VT+/VT– thresholds
(5) Refer to SOA charts for operating current information
(6) Not rated for continuous current operation
6.6 Dissipation Ratings
See (1)(2)(3).
DERATING FACTOR
BOARD PACKAGE RθJC RθJA(4) TA< 25°C TA= 70°C TA= 85°C TA= 105°C ABOVE TA= 25°C
High-K 6-Pin TSOT 43°C/W 105°C/W 1190 mW 760 mW 619 mW 428 mW 9.55 mW/°C
(JEDEC 51-7) (DDC)
(1) Maximum dissipation values for retaining a maximum allowable device junction temperature of 150°C
(2) Refer to TI’s design support web page at www.ti.com/thermal for improving device thermal performance
(3) Package thermal data based on a 76x114x1.6mm, 4-layer board with 2-oz Copper on outer layers
(4) Operating at the absolute TJ-max of 150°C can affect reliability; TJ125°C is recommended
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l TEXAS INSTRUMENTS Ma 52: _ gm: an: an a / a gun 3.1 v: 222 222 am an: a a a y u u a 2 ‘5 2 W a W a 524 m _ 2m; _ 25.2.; — I; u: — mu: nu ‘ w é / /://-/ 3n 1: / ‘ 222 m a 2 2s a 1 2 m m —n...2c —mgc w; m M? , _nn; 3 3 gm ‘ 3 / ME 22; / m a 2 25 2 15 2 25 1 m2 2 m A»
TPS27082L
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
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6.7 Typical Characteristics
Figure 1. Vdrop vs IL; VGS_Q1 = –1.2 V Figure 2. Vdrop vs IL; VGS_Q1 = –1.8 V
Figure 3. Vdrop vs IL; VGS_Q1 = –2.5 V Figure 4. Vdrop vs IL; VGS_Q1 = –3.3 V
Figure 5. Vdrop vs IL; VGS_Q1 = –4.5 V Figure 6. Vdrop vs IL; VGS_Q1 = –5.5 V
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l TEXAS INSTRUMENTS w m; 7 M; E i w; 002 a / 0 a; .5 3 :5 3 W . :53 1.75 :22 -250 - * i 2.25 _ 2.00 E 1.00 E 175 g 1.75 g 1.50 = 1,50 = 125 u .3 1,25 ¥ 1,00 1.00 g 3 0,75 —- “’75 059 0.50 0.15 0.15 0,00 0,00 0 10 40 50 so 100 110 140 0 10 4o 60 so 100 120 140 AmbientTemp (2c) AmbientTemp (90 2,75 . 215 ii: 1.00 i 1.00 E 1.75 g 1.75 7 E 150 g 1.50 g 1.15 3 1,25 7 a 1.00 ' 3 3-3: 7 ‘3 0,75 —- 0'50 050 0.15 7 0-15 0.00 . . . . . . 0.00 0 20 40 60 80 100110140 AmhielltTemp (9C) 0 10 4o 60 80 100 no 140 AmbiemTenwac)
TPS27082L
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SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
Typical Characteristics (continued)
Figure 7. Vdrop vs IL; VGS_Q1 = –7 V
6.7.1 PFET Q1 Minimum Safe Operating Area (SOA)
(Refer to Dissipation Ratings for PCB details)
Figure 8. Q1 SOA at VGS_Q1=-4.5V Figure 9. Q1 SOA at VGS_Q1=-3.0V
Figure 10. Q1 SOA at VGS_Q1=-2.5V Figure 11. Q1 SOA at VGS_Q1=-1.8V
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TPS27082L
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
www.ti.com
PFET Q1 Minimum Safe Operating Area (SOA) (continued)
(Refer to Dissipation Ratings for PCB details)
Figure 12. Q1 SOA at VGS_Q1=-1.5V Figure 13. Q1 SOA at VGS_Q1=-1.2V
Figure 14. ON/OFF Positive and Negative Going Threshold Voltage
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Q1
Q2
(1)
(5)
(6)
(4)
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SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
7 Detailed Description
7.1 Overview
The TPS27082L IC is a high side load switch that integrates a Power PFET and its control circuit in a tiny TSOT-
23 package. TPS27082L supports up to 8V supply input and up to 3A of load current. The TPS27082L can be
used in a variety of applications. The device has a programmable slew rate which helps reduce or eliminate
power supply droop due to large inrush currents. During shutdown, the device has very low leakage currents.
7.2 Functional Block Diagram
7.3 Feature Description
TPS27082L uses a low-voltage power PMOS transistor used as the pass element or switch between the supply
and load. It also integrates an NMOS transistor to turn the PMOS on and off by interfacing with a wide range of
GPIO voltages. Asserting an input voltage higher than Vih (1V) enables the PMOS switch by turning the NMOS
and the NMOS driving the PMOS gate towards ground. Series resistance of 12.5 k connect at the source of NPN
is integrated for TPS27082L. To control output rise time is programmed by connecting external capacitor at pin 6
of the device to design a delay time for PMOS to turn on.
7.4 Device Functional Modes
7.4.1 ON/OFF
When Vin > about 1 V and V(ON/OFF) > 1 V, the switch will turn on and Vout Vin.
When Vin > about 1 V and V(ON/OFF) < 1 V, the switch will turn off and Vout Vin.
7.4.2 Fastest Output Rise Time
Whenever it is desired to achieve the fastest output rise time, do not put a capacitor between Vout (Pins 2 and 3)
and R1/C1 (pin 6).
7.4.3 Controlled Output Rise Time
Whenever it is desired to control the output rise time, tie pin 1 (R2) to a resistance (R2) and put a capacitor (C1)
between Vout (Pins 2 and 3) and R1/C1 (pin 6).
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l TEXAS INSTRUMENTS i LuJ cw Ly R1 + 12.5 k
Q1
R1
VGS VIN V
R1 12.5 k
= - ´
+
ESD
ESD
ESD
Logic &
Control
TPS27082L
(4)
(6)
(5)
(2, 3)
RS=12.5kΩ
C1
VOUT
VIN
R1/C1
ON/OFF
R1
GND
(1)
ESD
Q1
Q2
TPS27082L
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
www.ti.com
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS27082L IC is a high side load switch that integrates a Power PFET and a Control NMOS in a tiny
package. The TPS27082L internal components are rated for up to 8V supply and support up to 3A of load
current.
8.2 Typical Application
The TPS27082L can be used in a variety applications. Figure 15 shows a general application of TPS27082L to
control the load inrush current. This section will highlight some of the design considerations when implementing
this device in various applications.
Figure 15. Typical Application Diagram
8.2.1 Design Requirements
Add an external pullup resistor R1 between VIN and R1/C1 to control the ON-resistance of the load switch.
Guidelines for sizing R1 can be found in Configuring Q1 ON-Resistance. In addition, TI recommends an output
capacitor at VOUT to minimize the impact of inrush current from instantaneous switching. See Configuring
Turnon Slew Rate for details regarding capacitor sizing.
8.2.2 Detailed Design Procedure
8.2.2.1 Configuring Q1 ON-Resistance
VGS-Q1, Gate-Source voltage, of PMOS transistor Q1 sets its ON-resistance RQ1(ON). Connecting a high value pull
up resistor R1 maximizes ON-state VGS-Q1 and thus minimizes the VIN to VOUT voltage drop. Use the following
equation for calculating VGS-Q1:
(1)
For example, R1= 125 k, VIN = 5 V sets VGSQ1 = –4.5 V
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TEXAS INSTRUMENTS V|N2
3
rise 2/3
50 10 C1
t  sec
VIN
´ ´
=
final initial
inrush load load
VOUT – VOUT
dv
IC C
dt Vout Slew  Rate
´ ´= =
TPS27082L
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SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
Typical Application (continued)
NOTE
It is recommended to keep R1 125 k. Higher value resistor R1 reduces ON-state
quiescent current, increases turn-OFF delay, while reducing ON/OFF negative going
threshold voltage VT–.
8.2.2.2 Configuring Turnon Slew Rate
Switching a large capacitive load CL instantaneously results in a load inrush current given by the following
equation:
(2)
An uncontrolled fast rising ON/OFF logic input may result in a high slew rate (dv/dt)at the output thus leading to a
higher load inrush current. To control the inrush current connect a capacitor C1 as shown in the Figure 15. Use
the following approximate empirical equation to configure the TPS27082L slew rate to a specific value.
where
• Trise is the time delta starting from the ON/OFF signal’s rising edge to charge up the load capacitor CL from
10% to 90% of VIN voltage (3)
Table 1. Capacitor C1 Selection for Standard Output Rise Time
C1 (F)
trise R1 = 125 k
(µSec)
(Typical) VIN=7V VIN=5V VIN=3.3V VIN=1.8V VIN=1.2V
500000
50 3.46n 2.77n 2.10n 1.41n 1.08n
100 6.91n 5.54n 4.21n 2.82n 2.16n
250 17.3n 13.8n 10.5n 7.05n 5.40n
470 32.5n 26.0n 19.8n 13.3n 10.1n
1000 69.1n 55.4n 42.1n 28.2n 21.6n
NOTE
The trise equation and the capacitor C1 values recommended in the table above are under
typical conditions and are accurate to within ±20%. Ensure R1 > 125k; and select a
closest standard valued capacitor C1.
8.2.2.3 Configuring Turnoff Delay
TPS27082L PMOS turnoff delay from the falling edge of ON/OFF logic signal depends upon the component
values of resistor R1 and capacitor C1. Lower values of resistor R1 ensures quicker turnoff.
toff > (R1 × C1 sec) (4)
8.2.2.4 OFF Isolation Under VIN Transients
TPS27082L architecture helps isolate fast transients at the VIN when PFET is in the OFF state. Best transient
isolation is achieved when an external capacitor C1 is not connected across VOUT and R1/C1 pins. When a
capacitor C1 is present the VIN to VOUT coupling is capacitive and is set by the C1 to CL capacitance ratio.
TPS27082L architecture prevents direct conduction through PFET.
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l TEXAS INSTRUMENTS Leakage Cunent [A) 3 50505 3 DOE'DS Z EOE-05 l 00E»05 1 50E705 1 DOEVOS S 00506 I 50519 '5 DOE'DG 50 100 1empemure (w) 150 +IF\’IN@VIN =5V +IF\’|N@VIN =8V
TPS27082L
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8.2.2.5 Low Voltage ON/OFF Interface
To turn on the load switch apply a voltage > 1.0 V at the ON/OFF pin. The TPS27082L features hysteresis at its
ON/OFF input. The turnon and turnoff thresholds are dependent upon the value of resistor R1. Refer to the
Electrical Characteristics table and Figure 14 for details on the positive and negative going ON/OFF thresholds.
In applications where ON/OFF signal is not available connect ON/OFF pin to the VIN pin. The TPS27082L will
turn ON and OFF in sync with the input supply connected to VIN.
8.2.2.6 On-Chip Power Dissipation
Use below approximate equation to calculate TPS27082L’s on-chip power dissipation PD:
PD = IDQ12× RQ1(ON)
where
• IDQ1 is the DC current flowing through the transistor Q1 (5)
Refer to Electrical Characteristics table and the Figure 1 through Figure 7 to estimate RQ1(ON) for various values
of VGSQ1.
Note: MOS switches can get extremely hot when operated in saturation region. As a general guideline, to avoid
transistors Q1 going into saturation region set VGS > VDS + 1.0 V. E.g. VGS > 1.5 V and VDS < 200mV ensures
switching region.
8.2.3 Application Curve
Figure 16. VIN Pin Leakage Current
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VIN VOUT
R1/C1
ON/OFF
Q1
Q2
R1 CIN
(2, 3)
R2
(1)
(5)
(6)
(4)
1.8 - 8V
Input
Boost Reg
CIN VIN SW
FB
GPIO
SHDN
VIN VOUT
R1/C1
ON/OFF
Q1
Q2
R1 COUT
(2, 3)
R2
(1)
(5)
(6)
(4)
GPIO
Up to
8V
Input CIN VDD
Standby
Module
Always ON
Modules
VDD
VIN VOUT
R1/C1
ON/OFF
Q1
Q2
R1
C1
COUT
(2, 3)
R2
(1)
(5)
(6)
(4)
GPIO
3-5V
Input
TFT
LCD
Module
CIN VDD
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8.3 System Examples
8.3.1 TFT LCD Module Inrush Current Control
Figure 17. Inrush Current Control Using TPS27082L
LCD panels require inrush current control to prevent permanent system damages during turn-ON and turn-OFF
events.
8.3.2 Standby Power Isolation
Figure 18. Boost
Many applications have some always ON modules to support various core functions. However, some modules
are selectively powered ON or OFF to save power and multiplexing of various on board resources. Such
modules that are selectively turned ON or OFF require standby power generation. In such applications
TPS27082L requires only a single pull-up resistor. In this configuration the VOUT voltage rise time is
approximately 250ns when VIN = 5V.
8.3.3 Boost Regulator With True Shutdown
Figure 19. True Shutdown Using TPS27082L
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VOUT1
R1/C1
ON/OFF
Q1
Q2
R1
C1
COUT1
(2, 3)
R2
(1)
(5)
(6)
(4)
Module1
(CPU/MCU)
CIN VDD1
1.2 - 8V
Input VOUT2
R1/C1
ON/OFF
Q1
Q2
R3
C2
COUT2
(2, 3)
R2
(1)
(5)
(6)
(4)
Module2
VDD2
GPIO
VIN1
LDO
SW Supply
(DC-DC)
CPU/MCU/SOC
VIN VOUT1
R1/C1
ON/OFF
Q1
Q2
R1
C1
CVDDIO
(2, 3)
R2
(1)
(5)
(6)
(4)
CIN
VDDIO VDD
CVDD
DVDD
TPS27082L
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
www.ti.com
System Examples (continued)
The most common boost regulator topology provides a current leakage path through inductor and diode into the
feedback resistor even when the regulator is shut down. Adding a TPS27082L in the input side power path
prevents this leakage current and thus providing a true shutdown.
8.3.4 Single Module Multiple Power Supply Sequencing
Figure 20. Power Sequencing Using TPS27082L, Example 1
Most modern SOCs and CPUs require multiple voltage inputs for its Analog, Digital cores and IO interfaces.
These ICs require that these supplies be applied simultaneously or in a certain sequence. TPS27082L when
configured, as shown in Figure 20, with the VOUT1 rise time adjusted appropriately through resistor R2 and
capacitor C1, will delay the early arriving LDO output to match up with late arriving DC-DC output and thus
achieving power sequencing.
8.3.5 Multiple Modules Interdependent Power Supply Sequencing
Figure 21. Power Sequencing Using TPS27082L, Example 2
For system integrity reasons a certain power sequencing may be required among various modules. As shown in
Figure 21, Module 2 will power up only after Module 1 is powered up and the Module 1 GPIO output is enabled
to turn ON Module 2. TPS27082L when used as shown in Figure 21 will not only sequence the Module 2 power,
but also it will help prevent inrush current into the power path of Module 1 and 2.
14 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated
Product Folder Links: TPS27082L
VIN1 VOUT1
R1/C1
ON/OFF
Q1
Q2
R1
C1
COUT1
(2, 3)
R2
(1)
(5)
(6)
(4)
Module1
CIN VDD1
Up to
8V
Input
VOUT2
R1/C1
ON/OFF
Q1
Q2
R3
C2
COUT2
(2, 3)
R2
(1)
(5)
(6)
(4)
Module2
VDD2
VIN2
TPS27082L
www.ti.com
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
System Examples (continued)
8.3.6 Multiple Modules Interdependent Supply Sequencing Without a GPIO Input
Figure 22. Power Sequencing using TPS27082L, Example 3
When a GPIO signal is not available connecting the ON/OFF pin of TPS27082 connected to Module 2 will power
up Module 2 after Module 1, when resistor R4 and capacitor C1 are chosen appropriately. The two TPS27082L
in this configuration will also control load inrush current.
Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Links: TPS27082L
Gnd
Vout
Vout Vin
ON/OFF
R1/C1
C1 R1
Vout
Bypass
Vin
Bypass
1
2
3 4
5
6
TPS27082L
TPS27082L
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
www.ti.com
9 Power Supply Recommendations
The device is designed to operate from a VIN range of 1.0 V to 8.0 V. This supply must be well regulated and
placed as close to the device terminal as possible with the recommended 1-μF bypass capacitor. If the supply is
located more than a few inches from the device terminals, additional bulk capacitance may be required in
addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or
ceramic capacitor of 1 μF may be sufficient.
10 Layout
10.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
VIN and VOUT traces should be as short and wide as possible to accommodate for high current.
The VIN pin should be bypassed to ground with low ESR ceramic bypass capacitors. The typical
recommended bypass capacitance is 1-μF ceramic with X5R or X7R dielectric. This capacitor should be
placed as close to the device pins as possible.
The VOUT pin should be bypassed to ground with low ESR ceramic bypass capacitors. The typical
recommended bypass capacitance is one-tenth of the VIN bypass capacitor of X5R or X7R dielectric rating.
This capacitor should be placed as close to the device pins as possible.
10.2 Layout Example
Figure 23. Layout Diagram
16 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated
Product Folder Links: TPS27082L
l TEXAS INSTRUMENTS JA
( )
J(MAX)
(MAX)
JA
T TA
PD
-
=q
TPS27082L
www.ti.com
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
10.3 Thermal Considerations
For higher reliability it is recommended to limit TPS27082L IC’s die junction temperature to less than 125°C. The
IC junction temperature is directly proportional to the on-chip power dissipation. Use the following equation to
calculate maximum on-chip power dissipation to restrict the die junction temperature target to safe limits:
where
• TJ(MAX) is the target maximum junction temperature,
• TAis the operating ambient temperature,
and RθJA is the package junction to ambient thermal resistance. (6)
10.3.1 Improving Package Thermal Performance
The package RθJA value under standard conditions on a High-K board is available in Dissipation Ratings. RθJA
value depends upon the PCB layout. An external heat sink and/or a cooling mechanism like a cold air fan can
help reduce RθJA and thus improving device thermal capability. Refer to TI’s design support web page at
www.ti.com/thermal for a general guidance on improving device thermal performance.
Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Links: TPS27082L
l TEXAS INSTRUMENTS
TPS27082L
SLVSBR5C –DECEMBER 2012REVISED JUNE 2015
www.ti.com
11 Device and Documentation Support
11.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
18 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated
Product Folder Links: TPS27082L
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TPS27082LDDCR NRND SOT-23-THIN DDC 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 BUA
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
I TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS ’ I+K0 '«PI» Reel Diame|er AD Dimension deSIgned Io accommodate me componem wIdIh E0 Dimension desIgned Io accommodaIe me component Iengm KO Dlmenslun desIgned to accommodate me componem Ihlckness 7 w Overen wmm OHhe earner cape i p1 Pitch between successwe cavIIy eemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D O SprockeIHoles ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pocket Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TPS27082LDDCR SOT-
23-THIN DDC 6 3000 180.0 9.5 3.17 3.1 1.1 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Jul-2020
Pack Materials-Page 1
I TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS27082LDDCR SOT-23-THIN DDC 6 3000 184.0 184.0 19.0
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Jul-2020
Pack Materials-Page 2
--I I-III
www.ti.com
PACKAGE OUTLINE
C
0.20
0.12 TYP 0.25
3.05
2.55
4X 0.95
1.100
0.847
0.1
0.0 TYP
6X 0.5
0.3
0.6
0.3 TYP
1.9
0 -8 TYP
A
3.05
2.75
B
1.75
1.45
SOT - 1.1 max heightDDC0006A
SOT
4214841/B 11/2020
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Reference JEDEC MO-193.
34
0.2 C A B
16
INDEX AREA
PIN 1
GAGE PLANE
SEATING PLANE
0.1 C
SCALE 4.000
www.ti.com
EXAMPLE BOARD LAYOUT
0.07 MAX
ARROUND 0.07 MIN
ARROUND
6X (1.1)
6X (0.6)
(2.7)
4X (0.95)
(R0.05) TYP
4214841/B 11/2020
SOT - 1.1 max heightDDC0006A
SOT
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
SYMM
LAND PATTERN EXAMPLE
EXPLOSED METAL SHOWN
SCALE:15X
SYMM
1
34
6
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED METAL
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDERMASK DETAILS
EXPOSED METAL
www.ti.com
EXAMPLE STENCIL DESIGN
(2.7)
4X(0.95)
6X (1.1)
6X (0.6)
(R0.05) TYP
SOT - 1.1 max heightDDC0006A
SOT
4214841/B 11/2020
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 THICK STENCIL
SCALE:15X
SYMM
SYMM
1
34
6
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