IKD10N60RF Datasheet by Infineon Technologies

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Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.5
www.infineon.com 2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
Features:
TRENCHSTOPTMReverseConducting(RC)technologyfor600V
applicationsoffering
•OptimizedEon,EoffandQrrforlowswitchinglosses
•Operatingrangeof4to30kHz
•SmoothswitchingperformanceleadingtolowEMIlevels
•Verytightparameterdistribution
•Maximumjunctiontemperature175°C
•Shortcircuitcapabilityof5µs
•Bestinclasscurrentversuspackagesizeperformance
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant(soldertemperature
260°C,MSL1)
CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
Domesticandindustrialdrives:
•Compressors
•Pumps
•Fans
G
C
E
G
E
C
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IKD10N60RF 600V 10A 2.2V 175°C K10R60F PG-TO252-3
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Datasheet 2 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet 3 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IC20.0
10.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 30.0 A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs - 30.0 A
Diodeforwardcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IF20.0
10.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 30.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
5
µs
PowerdissipationTc=25°C Ptot 150.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,1)
junction - case Rth(j-c) - - 1.00 K/W
Diode thermal resistance,2)
junction - case Rth(j-c) - - 2.60 K/W
Thermal resistance, min. footprint
junction - ambient Rth(j-a) - - 75 K/W
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Rth(j-a) - - 50 K/W
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
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Datasheet 4 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=10.0A
Tvj=25°C
Tvj=175°C
-
-
2.20
2.30
2.50
-
V
Diode forward voltage VF
VGE=0V,IF=10.0A
Tvj=25°C
Tvj=175°C
-
-
2.10
2.00
2.40
-
V
Gate-emitter threshold voltage VGE(th) IC=0.17mA,VCE=VGE 4.3 5.0 5.7 V
Zero gate voltage collector current1) ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
40
1000
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=10.0A - 4.6 - S
Integrated gate resistor rGnone Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 655 -
Output capacitance Coes - 37 -
Reverse transfer capacitance Cres - 22 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=480V,IC=10.0A,
VGE=15V - 64.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 7.0 - nH
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
IC(SC)
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=25°C
-74 - A
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 12 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 168 - ns
Fall time tf- 18 - ns
Turn-on energy Eon - 0.19 - mJ
Turn-off energy Eoff - 0.16 - mJ
Total switching energy Ets - 0.35 - mJ
Tvj=25°C,
VCC=400V,IC=10.0A,
VGE=0.0/15.0V,
RG(on)=26.0Ω,RG(off)=26.0Ω,
Lσ=50nH,Cσ=30pF
Lσ,CσfromFig.E
1) Not subject to production test - verified by design/characterization
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Datasheet 5 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 72 - ns
Diode reverse recovery charge Qrr - 0.27 - µC
Diode peak reverse recovery current Irrm - 9.1 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -146 - A/µs
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=750A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) - 12 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 178 - ns
Fall time tf- 20 - ns
Turn-on energy Eon - 0.31 - mJ
Turn-off energy Eoff - 0.21 - mJ
Total switching energy Ets - 0.52 - mJ
Tvj=175°C,
VCC=400V,IC=10.0A,
VGE=0.0/15.0V,
RG(on)=26.0Ω,RG(off)=26.0Ω,
Lσ=50nH,Cσ=30pF
Lσ,CσfromFig.E
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr - 112 - ns
Diode reverse recovery charge Qrr - 0.62 - µC
Diode peak reverse recovery current Irrm - 12.9 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -136 - A/µs
Tvj=175°C,
VR=400V,
IF=10.0A,
diF/dt=720A/µs
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Datasheet 6 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V,
VGE=15/0V,rG=26Ω,PCBmountingwith
thermal vias and heatsink, see Appnote:
www.infineon.com/igbt)
f,SWITCHINGFREQUENCY[kHz]
IC,COLLECTORCURRENT[A]
0.1 1 10 100
0
1
2
3
4
5
6
7
8
9
10
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
not for linear use
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12
14
16
18
20
@ : / : :EW/ : 32/ W 7W W / flfi / / / / / / \
Datasheet 7 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 5. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0 1 2 3 4
0
5
10
15
20
25
30
VGE = 20V
17V
15V
13V
11V
9V
7V
Figure 6. Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0 1 2 3 4
0
5
10
15
20
25
30
VGE = 20V
17V
15V
13V
11V
9V
7V
Figure 7. Typicaltransfercharacteristic
(VCE=10V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
4 6 8 10 12 14
0
5
10
15
20
25
30
Tj = 25°C
Tj = 175°C
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC = 1A
IC = 5A
IC = 10A
IC = 20A
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Datasheet 8 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,rG=26Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
5.0 7.5 10.0 12.5 15.0 17.5 20.0
1
10
100 td(off)
tf
td(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,IC=10A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
0 10 20 30 40 50 60 70 80 90 100 110
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=10A,rG=26Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
10
100
td(off)
tf
td(on)
tr
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0,17mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
25 50 75 100 125 150 175
1
2
3
4
5
6
7
typ.
min.
max.
/ / / / / /’ / / / / / / / / / // I / /
Datasheet 9 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,rG=26Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
5.0 7.5 10.0 12.5 15.0 17.5 20.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,IC=10A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
10 20 30 40 50 60 70 80
0.0
0.2
0.4
0.6
0.8
1.0
Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=10A,rG=26Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Eoff
Eon
Ets
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=15/0V,
IC=10A,rG=26Ω,Dynamictestcircuitin
Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
300 325 350 375 400 425 450
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Eoff
Eon
Ets
@
Datasheet 10 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 17. Typicalgatecharge
(IC=10A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 10 20 30 40 50 60 70
0
2
4
6
8
10
12
14
16
VCC=120V
VCC=480V
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
10
100
1000
Cies
Coes
Cres
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTvj=25°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
12 14 16 18 20
0
20
40
60
80
100
120
140
160
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTvj=150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
10 11 12 13 14 15 16 17 18 19
0
2
4
6
8
10
12
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Datasheet 11 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 21. IGBTtransientthermalimpedanceasa
functionofpulsewidth1)(seepage4)
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.0972
1.1E-4
2
0.4393
4.5E-4
3
0.3919
2.0E-3
4
0.0443
0.03487
Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth2)(seepage4)
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.3192
6.4E-5
2
1.604
2.6E-4
3
0.6161
1.6E-3
4
0.0732
0.021807
Figure 23. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
700 900 1100 1300 1500 1700 1900
0
25
50
75
100
125
150
Tj = 25°C, IF = 10A
Tj = 175°C, IF = 10A
Figure 24. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
700 900 1100 1300 1500 1700 1900
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Tj = 25°C, IF = 10A
Tj = 175°C, IF = 10A
@ . . . \ \ \ \ \ \ \ \ \\\\ \
Datasheet 12 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 25. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
700 900 1100 1300 1500 1700 1900
0
5
10
15
20
25
30
Tj = 25°C, IF = 10A
Tj = 175°C, IF = 10A
Figure 26. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
700 900 1100 1300 1500 1700 1900
-1200
-1000
-800
-600
-400
-200
0
Tj = 25°C, IF = 10A
Tj = 175°C, IF = 10A
Figure 27. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0 1 2 3 4
0
5
10
15
20
25
30
Tj = 175°C, VGE = 0V
Tj = 25°C, VGE = 0V
Figure 28. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
0 25 50 75 100 125 150 175
0.5
1.0
1.5
2.0
2.5
3.0
IF = 1A
IF = 5A
IF = 10A
IF = 20A
us" A (Z G M I El I72 4 g $0,254@AB I @ NOTES 1 ALL mMENsmNs REFER m JEDEE STANDARD T0451 Do NOT szqu MOLD FLASH 0R PfimfiusmNs A EL®
Datasheet 13 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
2.5
REVISION
06
05-02-2016
ISSUE DATE
EUROPEAN PROJECTION
0
SCALE
5mm
0
2.5
DOCUMENT NO.
Z8B00003328
MILLIMETERS
4.57 (BSC)
2.29 (BSC)
L4
D
N
H
E1
e1
e
E
D1
L3
1.18
0.51
0.89
5.02
9.40
6.35
4.32
5.97
3
b3
A
DIM
b2
c
b
c2
A1
4,95
MIN
2.16
0.64
0.46
0.65
0.40
0.00
1.78
1.02
5.21
5.84
6.22
6.73
1.27
10.48
5.50
MAX
2.41
0.15
1.15
0.61
0.89
0.98
L
Package Drawing PG-TO252-3
W ‘ 90% v5E ‘ 10% i/GE \ \ 90%:c (90%]: 10%:c mn/ Ic fifl \ fi 9B% vGE of switching times I \ / Def' on of switching losses / R /, - r ,+ z - , ion/DI ' ’m J‘“ v gown/W " "9 :1 ,2 L 1 r2 rn Ti“ “‘0 r1 r2 M Tu Thermal equivalent circuit mu
Datasheet 14 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
E
t
t
V I t
off = x x d
1
2
CE C
E
t
t
V I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
Testing Conditions
@
Datasheet 15 V2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMRC-DrivesFastSeries
RevisionHistory
IKD10N60RF
Revision:2017-09-26,Rev.2.5
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2012-02-24 Final data sheet
2.2 2013-12-10 New value ICES max limit at 175°C
2.3 2014-02-26 Without PB free logo
2.4 2014-03-12 Storage temp -55...+150°C
2.5 2017-09-26 Update Fig. 13 E(Ic)
no evenl LN ocum LN
Trademarks
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2018.
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