MSD/SMSD1819A-RT1G Datasheet by onsemi

0N Semiconductor® www.0nsemi.com
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 10 1Publication Order Number:
MSD1819A−RT1/D
MSD1819A-RT1G,
NSVMSD1819A-RT1G
General Purpose Amplifier
Transistor
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
Features
•High hFE, 210−460
•Low VCE(sat), < 0.5 V
•Moisture Sensitivity Level 1
•ESD Protection:
♦Human Body Model > 4000 V
♦Machine Model > 400 V
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Collector-Base Voltage V(BR)CBO 60 Vdc
Collector-Emitter Voltage V(BR)CEO 50 Vdc
Emitter-Base Voltage V(BR)EBO 7.0 Vdc
Collector Current − Continuous IC100 mAdc
Collector Current − Peak IC(P) 200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation (Note 1) PD150 mW
Junction Temperature TJ150 °C
Storage Temperature Range Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
COLLECTOR
3
1
BASE
2
EMITTER
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
Device Package Shipping†
ORDERING INFORMATION
ZR = Device Code
M = Date Code*
G= Pb−Free Package
MSD1819A−RT1G SC−70
(Pb−Free) 3,000 /
Tape & Reel
ZR M G
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
NSVMSD1819A−RT1G SC−70
(Pb−Free) 3,000 /
Tape & Reel
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MSD1819A−RT1G, NSVMSD1819A−RT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 − Vdc
Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0) V(BR)EBO 7.0 − Vdc
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO − 0.1 mA
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO − 0.1 mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
(VCE = 2.0 Vdc, IC = 100 mAdc) hFE1
hFE2
210
90 340
−
−
Collector-Emitter Saturation Voltage (Note 2)
(IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − 0.5 Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤300 ms, D.C. ≤2%.
Figure 1. Derating Curve Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (A)
150100500−50
0
50
100
150
200
250
10.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 3. DC Current Gain vs. Collector
Current Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0
50
100
200
250
300
350
450
10.10.010.0010.0001
0.25
0.35
0.45
0.55
0.65
0.75
0.85
0.95
PD, POWER DISSIPATION (mW)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VBE(sat), BASE−EMITTER SATURA-
TION VOLTAGE (V)
RqJA = 833°C/W
IC/IB = 10
25°C
150°C
−55°C
150
400 150°C (10 V)
150°C (2 V)
−55°C (10 V)
−55°C (2 V)
25°C (10 V)
25°C (2 V)
IC/IB = 10
25°C
150°C
−55°C
MSD1819A−RT1G, NSVMSD1819A−RT1G
www.onsemi.com
3
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current Figure 6. Collector Saturation Region
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.4
0.5
0.6
0.8
0.9
1.0
0.010.0010.00010.000010.000001
0
0.2
0.4
0.6
0.8
1.0
1.2
Figure 7. Input Capacitance
Veb, EMITTER BASE VOLTAGE (V)
6543210
7
8
10
11
13
15
16
18
VBE(on), BASE−EMITTER TURN ON VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Cibo, INPUT CAPACITANCE (pF)
Figure 8. Output Capacitance
Vcb, COLLECTOR BASE VOLTAGE (V)
40302520151050
1.0
1.5
2.0
3.0
4.0
4.5
5.5
6.0
Cobo, OUTPUT CAPACITANCE (pF)
25°C
150°C
−55°C
0.7
TA = 25°C
IC = 100 mA
50 mA
10 mA
1 mA
9
12
14
17
Cibo (pF)
2.5
3.5
5.0
35
Cobo (pF)
500 mA
Figure 9. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
100101
0.01
1
IC, COLLECTOR CURRENT (A)
0.1 100 ms
10 ms
1.0 ms
1.0 s
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SC−70 (SOT−323)
CASE 419−04
ISSUE N
DATE 11 NOV 2008
SCALE 4:1
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 1:
CANCELLED
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
XX MG
G
XX = Specific Device Code
M = Date Code
G= Pb−Free Package
GENERIC
MARKING DIAGRAM
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SC−70 (SOT−323)
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