MJ15022, 24 Datasheet by onsemi

0N Semimnductor® J1 502x AYWW M X
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 12
1Publication Order Number:
MJ15022/D
MJ15022 (NPN),
MJ15024 (NPN)
Silicon Power Transistors
The MJ15022 and MJ15024 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
•High Safe Operating Area
•High DC Current Gain
•These Devices are Pb−Free and are RoHS Compliant*
•Complementary to MJ15023 (PNP), MJ15025 (PNP)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJ15022
MJ15024
VCEO 200
250
Vdc
Collector−Base Voltage
MJ15022
MJ15024
VCBO 350
400
Vdc
Emitter−Base Voltage VEBO 5 Vdc
Collector−Emitter Voltage VCEX 400 Vdc
Collector Current − Continuous IC16 Adc
Collector Current − Peak (Note 1) ICM 30 Adc
Base Current − Continuous IB5 Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD250
1.43
W
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 0.70 _C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
16 AMPERES
SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
MJ15022G TO−204
(Pb−Free)
100 Units / Tray
MJ1502xG
AYWW
MEX
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MJ1502x = Device Code
x = 2 or 4
G=Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
MJ15024G TO−204
(Pb−Free)
100 Units / Tray
12
3
1
BASE
2
EMITTER
CASE
3
SCHEMATIC
MJ15022 (NPN), MJ15024 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0) MJ15022
MJ15024
VCEO(sus)
200
250
−
−
−
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc) MJ15022
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15024
ICEX
−
−
250
250
mAdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0) MJ15022
(VCE = 200 vdc, IB = 0) MJ15024
ICEO
−
−
500
500
mAdc
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0)
IEBO −500 mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non−repetitive))
(VCE = 80 Vdc, t = 0.5 s (non−repetitive))
IS/b
5
2
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
15
5
60
−
−
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
−
−
1.4
4.0
Vdc
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on) −2.2 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT4−MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob −500 pF
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
100
Figure 1. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.5 10 1 k
20
TC = 25°C
50 250
0.1
IC, COLLECTOR CURRENT (AMPS)
0.2
1.0
5.0
50
500100
10
20
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN
LIMITED
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.
MJ15022 (NPN), MJ15024 (NPN)
http://onsemi.com
3
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 2. Capacitances Figure 3. Current−Gain — Bandwidth Product
Figure 4. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.1 0.3 0.5
9
5
VCE = 4 V
8
2
1.0 5.0
0
1
3
4
7
6
1.8
0.03
IB, BASE CURRENT (AMPS)
1.0 305.02.00.5
1.0
0.6
0.2
2.0 10
0
1.4
100.20.1
8 A
IC = 4 A
4000
0.3
VR, REVERSE VOLTAGE (VOLTS)
50
C, CAPACITANCE (pF)
TJ = 25°C
10010
500
100
40
1000
3003010.5
Figure 5. “On” Voltage
5.0
1.8
0.15
IC, COLLECTOR CURRENT (AMPS)
10
V, VOLTAGE (VOLTS)
TJ = 25°C
205.0
1.0
0.8
0.2
0
1.4
2.01.0
VCE(sat) @ IC/IB = 10
0.5
VBE(on) @ VCE = 4 V
Figure 6. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
200
hFE, DC CURRENT GAIN
100
1.0
5.0
10
20
50
Cob
TJ = 25°C
TJ = 100°C
TJ = 25°C
VCE = 10 V
fTest = 1 MHz
100°C
25°C
TJ = 25°C
16 A
3000
0.2 10 205.02.01.00.5
Cib
100°C
TYPICAL CHARACTERISTICS
MECHANICAL CASE 0" Swim-mum m PACKAGE DIMENSIONS SCALEH 47A 4» N L r474 L E H \_l alien ;K mm mm mm BASE PW‘ m: 2 EMH’VER 2 can CASE cachvoR CASE Ew SMEs SWLE7 mm ME PW‘ mo 2 EMH’VER 2 OPEN CASE cachvoR CASE cm J I lunhev notice (a any prod ‘ Semxcunduclurcnmvunanls\nduslnes m: 2000 January, 2000 — Rev. 072
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
© Semiconductor Components Industries, LLC, 2000
January, 2000 − Rev. 07Z 1Case Outline Number:
1
SCALE 1:1
CASE 1−07
ISSUE Z DATE 05/18/1988
TO−204 (TO−3)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
STYLE 2:
PIN 1. BASE
2. COLLECTOR
CASE: EMITTER
STYLE 3:
PIN 1. GATE
2. SOURCE
CASE: DRAIN
STYLE 4:
PIN 1. GROUND
2. INPUT
CASE: OUTPUT
STYLE 5:
PIN 1. CATHODE
2. EXTERNAL TRIP/DELAY
CASE: ANODE
STYLE 6:
PIN 1. GATE
2. EMITTER
CASE: COLLECTOR
STYLE 7:
PIN 1. ANODE
2. OPEN
CASE: CATHODE
STYLE 8:
PIN 1. CATHODE #1
2. CATHODE #2
CASE: ANODE
STYLE 9:
PIN 1. ANODE #1
2. ANODE #2
CASE: CATHODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T− SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
UL
GB
V
H
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