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SIR640ADP-T1-GE3 N-Channel 40V 41.6A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Price & Procurement
5 970 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,67000 1,67 €
10 1,50500 15,05 €
100 1,10760 110,76 €
500 0,93716 468,58 €
1 000 0,79516 795,16 €

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Alternate Package
  • Tape & Reel (TR)  : SIR640ADP-T1-GE3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 5 970 - Immediate
  • Unit Price: 0,76097 €
  • Digi-Reel®  : SIR640ADP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 5 970 - Immediate
  • Unit Price: Digi-Reel®

SIR640ADP-T1-GE3

Datasheet
Digi-Key Part Number SIR640ADP-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SIR640ADP-T1-GE3
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Description MOSFET N-CH 40V 60A PPAK SO-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 40V 41.6A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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Documents & Media
Datasheets SiR640ADP
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 41.6A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4240pF @ 20V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SIR640ADP-T1-GE3CT