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SI3483CDV-T1-GE3 P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Price & Procurement
339 800 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,87000 0,87 €
10 0,77700 7,77 €
25 0,73760 18,44 €
100 0,55310 55,31 €
250 0,54784 136,96 €
500 0,46882 234,41 €
1 000 0,38190 381,90 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI3483CDV-T1-GE3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 339 000 - Immediate
  • Unit Price: 0,37663 €
  • Digi-Reel®  : SI3483CDV-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 339 800 - Immediate
  • Unit Price: Digi-Reel®

SI3483CDV-T1-GE3

Datasheet
Digi-Key Part Number SI3483CDV-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI3483CDV-T1-GE3
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Description MOSFET P-CH 30V 8A 6-TSOP
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

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Documents & Media
Datasheets SI3483CDV
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI3483CDV
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 34mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Part Number SI3483
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI3483CDV-T1-GE3CT