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Product Overview
Digi-Key Part Number SIHP33N60E-GE3-ND
Quantity Available 862
Can ship immediately
Manufacturer

Manufacturer Part Number

SIHP33N60E-GE3

Description MOSFET N-CH 600V 33A TO-220AB
Expanded Description N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 19 Weeks
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Bulk ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Rds On (Max) @ Id, Vgs 99 mOhm @ 16.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 1 000
Other Names SIHP33N60EGE3

09:46:58 2.20.2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 5,44000 5,44
10 4,88800 48,88
25 4,62120 115,53
100 4,00510 400,51
250 3,79976 949,94
500 3,40950 1 704,75
1 000 2,87549 2 875,49
2 500 2,73171 6 829,28

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