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Product Overview
Digi-Key Part Number IRFBE30PBF-ND
Quantity Available 8 534
Can ship immediately
Manufacturer

Manufacturer Part Number

IRFBE30PBF

Description MOSFET N-CH 800V 4.1A TO-220AB
Expanded Description N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 3 Ohm @ 2.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 50
Other Names *IRFBE30PBF

19:44:54 2.19.2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,42000 1,42
10 1,27200 12,72
25 1,20000 30,00
100 1,02210 102,21
250 0,95976 239,94
500 0,83978 419,89
1 000 0,69581 695,81
2 500 0,64782 1 619,56
5 000 0,62383 3 119,16

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