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Product Overview
Digi-Key Part Number TK9J90ES1E-ND
Quantity Available 1 220
Can ship immediately
Manufacturer

Manufacturer Part Number

TK9J90E,S1E

Description MOSFET N-CH 900V TO-3PN
Expanded Description N-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets TK9J90E
Product Attributes Select All
Categories
Manufacturer

Toshiba Semiconductor and Storage

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Rds On (Max) @ Id, Vgs 1.3 Ohm @ 4.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3
 
Additional Resources
Standard Package ? 25
Other Names TK9J90E,S1E(S
TK9J90ES1E

19:51:11 3.23.2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 3,15000 3,15
10 2,81200 28,12
25 2,53160 63,29
100 2,30630 230,63
250 2,08124 520,31
500 1,86752 933,76
1 000 1,57502 1 575,02
2 500 1,49627 3 740,67

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