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Product Overview
Digi-Key Part Number TK6A60DSTA4QM-ND
Quantity Available 2 282
Can ship immediately
Manufacturer

Manufacturer Part Number

TK6A60D(STA4,Q,M)

Description MOSFET N-CH 600V 6A TO220SIS
Expanded Description N-Channel 600V 6A (Ta) 40W (Tc) Through Hole TO-220SIS
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets TK6A60D
Catalog Page 1393 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer

Toshiba Semiconductor and Storage

Series π-MOSVII
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Rds On (Max) @ Id, Vgs 1.25 Ohm @ 3A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
 
Additional Resources
Standard Package ? 2 500
Other Names TK6A60DSTA4QM

20:53:38 2.26.2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,55000 1,55
10 1,37500 13,75
25 1,24160 31,04
100 1,08650 108,65
250 0,95344 238,36
500 0,84258 421,29
1 000 0,66519 665,19
2 500 0,62084 1 552,11

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