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Product Overview
Digi-Key Part Number SCT2280KEC-ND
Quantity Available 705
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 1200V 14A TO-247
Expanded Description N-Channel 1200V (1.2kV) 14A (Tc) 108W (Tc) Through Hole TO-247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Documents & Media
Datasheets SCT2280KE
Mfg Application Notes SiC Power Devices and Modules
Product Training Modules SiC MOSFETs
Video File ROHM Semiconductor SiC MOSFET Technology
Featured Product 2nd Generation High-Voltage SiC MOSFETs
1200 V Silicon Carbide (SiC) Diodes
Product Attributes Select All

Rohm Semiconductor

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 4V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 667pF @ 800V
Vgs (Max) +22V, -6V
FET Feature -
Power Dissipation (Max) 108W (Tc)
Rds On (Max) @ Id, Vgs 364 mOhm @ 4A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
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Additional Resources
Standard Package ? 360

19:07:44 3.24.2017

Price & Procurement

All prices are in EUR.
Price Break Unit Price Extended Price
1 10,43000 10,43
10 9,38900 93,89
25 8,55440 213,86
100 7,71990 771,99
250 7,09400 1 773,50
500 6,46808 3 234,04

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