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Product Overview
Digi-Key Part Number SCT2120AFC-ND
Quantity Available 887
Can ship immediately
Manufacturer

Manufacturer Part Number

SCT2120AFC

Description MOSFET N-CH 650V 29A TO-220AB
Expanded Description N-Channel 650V 29A (Tc) 165W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Documents & Media
Datasheets SCT2120AF Datasheet
Mfg Application Notes SiC Power Devices and Modules
Product Training Modules SiC MOSFETs
Video File ROHM Semiconductor SiC MOSFET Technology
Product Attributes Select All
Categories
Manufacturer

Rohm Semiconductor

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 4V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 61nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 500V
Vgs (Max) +22V, -6V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Rds On (Max) @ Id, Vgs 156 mOhm @ 10A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 1 000

01:13:31 1.24.2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 8,71000 8,71
100 8,00760 800,76

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