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Product Overview
Digi-Key Part Number IRFB260NPBF-ND
Quantity Available 839
Can ship immediately
Manufacturer

Manufacturer Part Number

IRFB260NPBF

Description MOSFET N-CH 200V 56A TO-220AB
Expanded Description N-Channel 200V 56A (Tc) 380W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets IRFB260NPbF
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Packaging Package Drawing Update 19/Aug/2015
Catalog Page 1258 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4220pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 380W (Tc)
Rds On (Max) @ Id, Vgs 40 mOhm @ 34A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 50
Other Names *IRFB260NPBF
SP001551726

13:58:35 1.19.2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 3,48000 3,48
10 3,13000 31,30
100 2,56410 256,41
500 2,18278 1 091,39
1 000 1,84090 1 840,90

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