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Product Overview
Digi-Key Part Number IRF630NPBF-ND
Quantity Available 1 465
Can ship immediately
Manufacturer

Manufacturer Part Number

IRF630NPBF

Description MOSFET N-CH 200V 9.3A TO-220AB
Expanded Description N-Channel 200V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 82W (Tc)
Rds On (Max) @ Id, Vgs 300 mOhm @ 5.4A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 50
Other Names *IRF630NPBF
SP001564792

02:35:47 1.18.2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,20000 1,20
10 1,07600 10,76
100 0,83890 83,89
500 0,69298 346,49
1 000 0,54709 547,09

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