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Product Overview
Digi-Key Part Number IPP65R099C6XKSA1-ND
Quantity Available 313
Can ship immediately
Manufacturer

Manufacturer Part Number

IPP65R099C6XKSA1

Description MOSFET N-CH 650V 38A TO220
Expanded Description N-Channel 650V 38A (Tc) 278W (Tc) Through Hole PG-TO-220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets IPx65R099C6
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Manufacturer

Infineon Technologies

Series CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Rds On (Max) @ Id, Vgs 99 mOhm @ 12.8A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 500
Other Names SP000895218

17:19:24 2.23.2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 5,70000 5,70
10 5,15700 51,57
100 4,26950 426,95
500 3,71784 1 858,92
1 000 3,23812 3 238,12

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