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Product Overview
Digi-Key Part Number IPP110N20N3 G-ND
Quantity Available 5 168
Can ship immediately
Manufacturer

Manufacturer Part Number

IPP110N20N3 G

Description MOSFET N-CH 200V 88A TO220-3
Expanded Description N-Channel 200V 88A (Tc) 300W (Tc) Through Hole PG-TO-220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series OptiMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Rds On (Max) @ Id, Vgs 11 mOhm @ 88A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 500
Other Names IPP110N20N3G
IPP110N20N3GXKSA1
SP000677892

20:21:27 1.19.2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 6,04000 6,04
10 5,42000 54,20
100 4,44040 444,04
500 3,78004 1 890,02
1 000 3,18798 3 187,98

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